GOPOWER / GALLIA research consortium - Research

Material Elaboration

Person in charge :

Ga2O3 epilayers growth

Gallium Oxide and related materials epilayers are grown by MOCVD (Metal Organic Chemical Vapor Deposition) technique.

Horizontal reactor (SAT)

Main characteristics of the system:
Sources :
– Elements :Ga, Zn, Mn, Al, Mg,…
– Eléments  N2O, O2, t-butanol,NH3

Carrier gas: He, H2, Ar, N2
Pression : 30 torr → atmospheric pressure
Temperature : induction heating → 1000°C
Substrate size: up to 2×2″