Our objective will be to understand the electrical conductivity mechanism. Electrical properties must be tenable to allow the use of Ga₂O₃ alternately as both as semi- insulating layer and a conducting layer in the device.

-We are studding electrical contacts(Ohmic and Schottky) particularly for p-type gallium Oxide.

We perform detailed electrical measurements in order to elucidate the mechanisms of conductivity in Ga₂O₃ (dopant energy levels, majority carrier type, densities of free carriers, mobility, magnetoresistance).

Seebeck Effect measurements

Home built set up adapted to highly resistive materials in 20-300C temperature range.

Home built High temperature high impedance measurements

Over the years, GEMaC has developed sophisticated home-built instrumentations for studying electronic properties of “extreme highly resistive materials”: resistivity, Hall Effect, magneto-transport, and photoconductivity in temperature range 2K to 850K can be explored with 0-9T applied magnetic field.

“TORNADO”-PPMS

Conventional PPMS allows to measure samples with a resistance up to R = 1 Ω. This limitation precludes low temperature studies of thin layers of many oxides as well as semi-conductor diamond. In GEMaC, we have developed a special option (both hardware and software) that we call “Tornado”. It allows us to perform resistivity and Hall measurements in Van der Pauw configuration, for samples that have a resistivity up to R=1e+10 Ω.