As-grown Gallium oxide layers go under structural, morphological characterizations and chemical/compositional analysis, in order to determine the crystalline phase of the material, as well as the structural quality, surface roughness, and interface nature.
For the doped samples, SIMS/EDS measurements are carried out to accurately measure the concentration of dopant, and depth profile. XPS and UPS analyses are applied systematically.
The selected samples are studied by Electron Loss Spectroscopy (EELS), Transmittance Electron Microscopy (TEM),Rutherford Backscattering Spectrometry for chemical level analyses at atomic level and interfaces.