Congratulations to  Dr. Zeyu Chi!!

11/07/2023, Versailles

Ultra-wide band gap semiconductors β-Ga2O3 and ZnGa2O4 electronic properties

Abstract:
In context of necessity of accelerating climate-saving actions by improving energy efficiency and reducing power consumption, ultra-wide band gap (Eg > 4.5 eV) β-Ga2O3 and ZnGa2O4 oxides are considered as promising materials for efficient power electronics devices. The objective of my PhD theses work was to investigate electronic properties of β-Ga2O3 and ZnGa2O4 thin films in order to disclose their real potentiality for applications in optoelectronics. By using multiple experimental characterization and analysis techniques for studding point defects the two problems were addressed: the realization/control of n-type and p-type conductivity and estimation/engineering critical electrical fields.