While there are several n-type transparent semiconductor oxides (TSO) for optoelectronic applications (e.g. LEDs, solar cells or display TFTs), their required p-type counterpart oxides are known to be more challenging. At this time, the n-type TSO with the largest bandgap (Eg=5 eV) is Ga2O3 that holds the promise of extending the light transparency further into the deep ultraviolet. In this work, it is demonstrated that strongly compensated Ga2O3 is also an intrinsic (or native) p-type TSO with the largest bandgap for any reported p-type TSO.

J. Mater. Chem. C, 2019, 7, 10231–10239 | 10235