GOPOWER / GALLIA research consortium - Highlight

Native “imperfections” enable room-temperature p-type conductivity in beta-Ga2O3

In this work we have demonstrated the first time that Zn doping of β-Ga2O3/r-sapphire thin film grown by MOCVD technique can exhibit a long-time stable room-temperature hole conductivity with a conductivity activation energy of around 86 meV. The origin of this level might be attributed then the donor-acceptor complex . (Figure) We believe that this study will add new evidences and will help to break a “taboo” related to the feasibility of room temperature hole conductivity in Ga2O3 via traditional growth technique and doping. We hope that we can inspire researchers to further study experimentally the point defects in β-Ga2O3.