In this work we have demonstrated the first time that Zn doping of β-Ga₂O₃/r-sapphire thin film grown by MOCVD technique can exhibit a long-time stable room-temperature hole conductivity with a conductivity activation energy of around 86 meV. The origin of this level might be attributed then the donor-acceptor complex . (Figure) We believe that this study will add new evidences and will help to break a “taboo” related to the feasibility of room temperature hole conductivity in Ga₂O₃ via traditional growth technique and doping. We hope that we can inspire researchers to further study experimentally the point defects in β-Ga₂O₃.