Project plans to validate the potentiality of Ga₂O₃ for future power devices by the elaboration of p-type epi-layers and their integration in PiN diodes.

-Advanced modelling, device simulations will be used to determine the parameters as layer thicknesses, doping levels, V_BR, impact ionization, optimal type and parameters of edge terminations for two types (different i-layer) PiN diode structures.

High voltage measurements will be performed with the aim measure device V_BR and estimate E_BR of our material . High temperature characterizations of diodes will be performed as well.

An analysis of the metal-insulator-semiconductor (MIS) interface will be carried out through capacitance-voltage methods, for appropriate field-plate and passivation technologies.